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Which outcome results when electrons face rapidly changing potential near a MOSFET gate?

A)Increased channel transit time
B)Photon emission from oxide layer
C)Quantum mechanical tunneling increases
D)Substrate temperature significantly decreases

💡 Explanation

Increased quantum mechanical tunneling occurs because rapid potential changes impart energy, elevating electron wave functions allowing more electrons to tunnel through the gate's barrier, therefore reducing isolation rather than the other effects tied to thermal behavior near the channel.

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