Which outcome results when gate oxide tunneling degrades transistor reliability?

💡 Explanation

Increased subthreshold leakage occurs because electron Quantum Tunneling breaches the gate oxide's insulating layer, therefore increasing current flow when the transistor is supposed to be off, rather than improving carrier behavior or other gate effects.

• Which consequence results when extreme spacetime curvature spans neutron star?
• Which outcome results when a polymer's cross-linking density rises above a critical threshold under sustained load?
• Which risk increases when exceeding pump's design cavitation constraint in cycling crude-oil pipeline?
• Which risk increases due to dielectric relaxation when an alternating voltage is applied to a cable's insulation?
• Within a MOSFET transistor with overly thin gate oxide, which outcome results from manufacturing variations?
• Which behavior arises in fluoromethane due to bonding?