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← ScienceWhich outcome results when oxide thickness decreases in a quantum dot flash memory array?
A)Increased electron charge leakage
B)Reduced data retention lifetime✓
C)Higher power consumption during write
D)Enhanced read disturb sensitivity
💡 Explanation
Decreasing oxide thickness allows more electrons to escape the quantum dot via Quantum Tunneling, because a thinner barrier increases the probability of tunneling electrons. The resulting charge loss therefore reduces the data retention lifetime rather than other performance metrics or failure modes.
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