Which outcome results when quantum tunneling exceeds implant threshold?

💡 Explanation

Increased subthreshold leakage current results with quantum tunneling occurring in MOSFET transistors within integrated circuits, because electrons tunnel through the gate oxide layer, increasing off-state current. Therefore leakage escalates, rather than a threshold drop occurring.

• Which limit arises correlating spatially separated entangled photons?
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• Which outcome is accelerated when tensile stress concentrators form within a polycrystalline metal?
• Which outcome occurs thermodynamically to isobutane during refrigeration compression?