Which outcome results when SRAM cells experience deep sub-threshold voltages?

A)Increased bit errors due to tunneling✓

B)Reduced cell power consumption markedly

C)Faster read cycles become possible

D)Enhanced noise immunity significantly improves

💡 Explanation

Elevated bit errors occur because quantum tunneling allows electrons to pass through transistors even when they are nominally off. This is Tunneling Field Effect rather than reduced energy; the erroneous current flow flips bits therefore causing the errors, rather than reduced power.

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Which outcome results when SRAM cells experience deep sub-threshold voltages?

💡 Explanation

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