Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich performance issue may result when exceeding the reverse voltage threshold of a MOSFET's body diode junction?
A)Increased subthreshold leakage current
B)Thermal runaway due to avalanche✓
C)Reduced gate oxide breakdown voltage
D)Increased gate-source capacitance variation
💡 Explanation
Thermal runaway can occur because avalanche breakdown in the body diode junction leads to excessive current and heat. Therefore, exceeding the reverse voltage results in destructive thermal effects rather than minor parametric shifts such as leakage, because the junction is now dissipating significant power internally.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which outcome occurs in a three-phase electrical transmission circuit experiencing a single line-to-ground fault?
- Which limitation manifests when helicopter turbine RPM exceeds operational parameters?
- Which outcome occurs when positional feedback from a robotic arm's optical encoder fails during a programmed task?
- Which outcome occurs when the concrete of a post-tensioned beam shrinks excessively?
- Above a critical angular speed, which outcome occurs when a gas turbine's pistons undergo rapid thermal cycling?
- Which outcome occurs when an HVAC evaporator's airflow is severely restricted?
