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Which phenomenon can occur upon applying intense strain to a semiconductor?

A)Band gap energy decreases substantially
B)Increased thermal conductivity occurs rapidly
C)Increased electron effective mass only
D)Crystal lattice defects become mobile

💡 Explanation

Applying strain modifies the interatomic spacing, causing band structure changes and decreasing the band gap due to deformation potential. Therefore, the band gap narrows, rather than lattice defects being the primary response, because electronic structure is immediately sensitive.

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