Which phenomenon causes increased current flow in a tunnel diode when the reverse bias is slightly increased?

💡 Explanation

When reverse bias is applied, the Fermi level alignment increases tunneling probability because the density of occupied states on one side overlaps with the density of unoccupied states on the other; wave functions overlap. Therefore increased electron wave function overlap results, rather than capacitance reduction, thermal generation, or reduced surface recombination, which have different causes.

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