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Which phenomenon causes reduced efficiency when modulating a semiconductor laser near its material's band edge?

A)Gain saturation decreases rapidly
B)Auger recombination rate increases
C)Carrier induced index change dominates
D)Material dispersion minimum bandwidth attained

💡 Explanation

Strong carrier densities in the laser active region alters free carrier dispersion, leading to significant refractive index change, a type of Kramers-Kronig relation. Index change causes wavelength shifts and reduces efficiency particularly near band edges because optical gain is more frequency-sensitive, rather than pure gain saturation effects.

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