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Which phenomenon limits channel conductivity when MOSFET transistors shrink below 5 nanometers?

A)Electron tunneling through gate oxide
B)Increased lattice vibration scattering
C)Surface recombination at silicon interface
D)Polysilicon depletion near gate edge

💡 Explanation

When MOSFET channel length shrinks below 5nm, electron tunneling through the gate oxide increases because the barrier width decreases, significantly increasing gate leakage and limiting channel conductivity. Therefore, option A correctly describes the outcome, rather than the other mechanisms involving phonon scattering or surface effects.

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