Which phenomenon limits electron injection efficiency in tunnel field-effect transistors (TFETs) at low gate voltages?

💡 Explanation

At low gate voltages in TFETs, reduced band bending at the source-channel junction decreases the tunneling probability because the energy barrier becomes wider and higher, hindering efficient carrier injection. Therefore, reduced band bending limits injection efficiency, rather than thermal generation, scattering, or oxide capacitance, which affect transistor behavior differently.

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