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Which phenomenon results when increased temperature widens the band gap of silicon?

A)Increased electron-hole recombination rate
B)Increased piezoelectric voltage output
C)Increased thermoelectric power generation
D)Decreased reverse saturation current

💡 Explanation

Increased temperature raises electron energy, thus widening silicon's band gap, therefore increasing electron-hole recombination rate because more electrons attain sufficient energy to jump bands, rather than reduced recombination occurring at lower temperatures with smaller band gaps.

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