Which process governs the etch rate uniformity during plasma etching of a silicon wafer?

💡 Explanation

During plasma etching, the supply of reactive species dictates etch rate uniformity based diffusion limited transport because reactant concentration varies across the wafer surface due to gas flow dynamics. Therefore the gas-diffusion effect drives uniformity differences, rather than temperature, RF field, or pressure, which affect overall etch rate but not the spatial distribution as directly.

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