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Which process limits transistor scaling due to gate oxide insulators?

A)Quantum mechanical electron tunneling
B)Increased thermal carrier injection
C)Reduced electron collisional ionization
D)Enhanced Schottky barrier formation

💡 Explanation

Reduced gate oxide thickness leads to electron tunneling directly through the insulator; the tunneling current increases because the electrons utilize quantum tunneling to cross the thin insulator barrier, rather than thermionic emission which requires more energy.

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