Which risk increases due to the slow thermal dissipation in tightly packed molecular electronics?

A)Increased transistor gate oxide breakdown✓

B)Elevated resonant frequency instability

C)Enhanced quantum tunneling probability

D)Reduced electron doping effectiveness

💡 Explanation

Increased transistor gate oxide breakdown occurs because self-heating effects drive temperatures beyond operational limits; the mechanism is thermal runaway; therefore, the risk elevates because gate oxide is sensitive to excess heat rather than other impacts.

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Which risk increases due to the slow thermal dissipation in tightly packed molecular electronics?

💡 Explanation

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