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Which risk increases during rapid reverse-voltage transitions in an inductive power diode circuit?

A)Increased reverse recovery current
B)Reduced static forward losses
C)Decreased junction capacitance effects
D)Enhanced thermal runaway stability

💡 Explanation

Increased reverse recovery current occurs because during switching, the `reverse recovery mechanism` is initiated as stored charge carriers are swept back across the p-n junction, therefore increasing current, rather than maintaining low conduction losses under forward bias or optimal thermal stability.

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