Which risk increases for floating gate transistors as gate dielectric thickness shrinks?

A)Increased electron tunneling probability✓

B)Reduced channel inversion efficiency

C)Phonon scattering induced resistance

D)Hot carrier injection degradation

💡 Explanation

The increased risk involves quantum tunneling. The electron tunneling probability increases because the distance the electrons must tunnel across decreases, therefore more electrons escape the floating gate, rather than being trapped as intended for non-volatile memory.

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Which risk increases for floating gate transistors as gate dielectric thickness shrinks?

💡 Explanation

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