Which risk increases if a metal-oxide-semiconductor (MOS) capacitor dielectric fails?

💡 Explanation

A dielectric failure in a MOS capacitor risks thermal runaway via increased gate leakage, because charge accumulation exceeds dissipation, therefore causing heat buildup leading to transistor damage, rather than improved damping.

• Which consequence results when capacitive coupling exceeds design threshold?
• Which effect results when a Stirling engine operates isothermally without pressure drops?
• Which outcome occurs when a substitutional impurity disrupts a semiconductor's lattice periodicity?
• Which consequence arises when a flowmeter's Reynolds number exceeds design limits?
• Which outcome occurs when a rapidly cooled semiconductor crystal contains dislocations?
• Which consequence results when dopants disrupt silicon crystal periodicity?