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Which risk increases near the saturation drain voltage limit of a field effect transistor?

A)Increased electron-hole recombination rate
B)Channel length modulation effects
C)Reduced gate oxide tunneling current
D)Decreased substrate doping concentration

💡 Explanation

Channel length modulation increases because the depletion region extends further towards the source, effectively shortening the channel; therefore, the transistor's output impedance decreases rather than recombination increasing because drain voltage has exceeded limits.

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