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Which risk increases significantly when applying reverse bias beyond the rated peak-inverse-voltage (PIV) to a diode?

A)Avalanche breakdown within the diode
B)Increased forward voltage drop arises
C)Thermal runaway leading to instability
D)Reduced switching speed impairment

💡 Explanation

Applying reverse voltage surpassing PIV leads to avalanche breakdown because high electric fields accelerate electrons causing impact ionization within the diode; therefore current surges leading to possible destruction, rather than controlled conduction as in forward bias.

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