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← ScienceWhich risk increases significantly within a microchip when current density nears electromigration limits?
A)Increased dielectric breakdown probability
B)Oxidation layer thickness decreases
C)Atomic diffusion accelerates drastically✓
D)Capacitance values shift erratically
💡 Explanation
Electromigration causes increased atomic diffusion along grain boundaries because electron momentum transfers energy to the metal lattice driving movement; therefore voiding and interconnect failure become probable, rather than changes to dielectric strength or oxidation that depend primarily operating voltage/temperature.
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