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Which risk increases to integrated circuits when exposed to intense electromagnetic pulse fields during geomagnetic storms?

A)Latch-up triggering from parasitic transistors
B)Oxide breakdown from accumulated charge
C)Electromigration from increased current density
D)Package cracking from thermal shock

💡 Explanation

When strong electromagnetic pulse fields are present, latch-up can occur because the parasitic bipolar transistors inherent in CMOS structures are triggered by induced currents, causing a high current flow. Therefore latch-up triggering results, rather than oxide breakdown, electromigration, or cracking that require different damage pathways.

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