Which risk increases when a doped silicon crystal used in a high-power transistor undergoes rapid thermal cycling?

💡 Explanation

Kirkendall voids increase because repeated heating and cooling promotes differential diffusion rates within the crystal, concentrating vacancies. Therefore, voids form, leading to mechanical stress failures, rather than mobility increases which stable conditions favor.

• Which risk increases when the injected substrate concentration overwhelms an enzyme's active site?
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• Which consequence results when an industrial exothermic reactor encounters thermal runaway?
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• Which consequence results when a microwave waveguide's impedance varies periodically?
• Which outcome results when a waveguide's dimensions approach zero?