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← ScienceWhich risk increases when a flash memory cell is programmed?
A)Adjacent cell data bit corruption✓
B)Increased thermal runaway threshold
C)Write speed approaches zero
D)Gate oxide layer crystallization
💡 Explanation
Adjacent cell data can change due to Fowler-Nordheim tunneling. Erasing or programming a cell requires high voltage, because electrons tunnel through the oxide layer to charge the floating gate; therefore, a nearby cell may unintentionally gain charge rather than remain stable.
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