Which risk increases when a gate oxide thins?

💡 Explanation

Reduced oxide thickness yields higher electric field. This raises the electron quantum tunneling probability through gate dielectric isolation, which cause leakage, therefore, rather than changes in resistance because tunneling is an quantum effect, and the temperature would respond to the higher current.

• In a palladium membrane hydrogen purifier operating above 300°C, which outcome results when hydrogen partial pressure increases?
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