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Which risk increases when a high-density flash memory cell size shrinks?

A)Adjacent cell data corruption
B)Increased write amplification factor
C)Reduced program/erase cycle endurance
D)Higher operating temperature instability

💡 Explanation

Adjacent memory cell data corruption increases as cell size shrinks because quantum tunneling allows electrons to leak between cells during programming, thus affecting neighboring cells, rather than endurance issues or temperature because the reduced oxide barrier promotes tunneling.

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