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Which risk increases when a MOSFET operating in a high-frequency switching regulator exceeds its safe operating area?

A)Threshold voltage runaway occurs
B)Increased gate oxide breakdown
C)Latch-up susceptibility increases
D)Channel length modulation decreases

💡 Explanation

Exceeding the MOSFET's safe operating area raises junction temperatures, because increased temperature accelerates the gate oxide breakdown mechanism due to enhanced ion migration. Therefore oxide damage is more likely, rather than the threshold voltage shift which happen due to different effects.

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