Which risk increases when a MOSFET's gate oxide layer decreases?

A)Increased electron hot carrier injection✓

B)Reduced channel length modulation

C)Improved subthreshold swing performance

D)Lower gate tunneling probability leakage

💡 Explanation

Decreasing the gate oxide thickness in a MOSFET raises the electric field, because it allows electrons to gain more energy; therefore, hot carrier injection becomes more likely, rather than improved performance, under stress bias conditions.

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Which risk increases when a MOSFET's gate oxide layer decreases?

💡 Explanation

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