Which risk increases when a nanoscale flash memory cell's oxide layer degrades?

💡 Explanation

Increased quantum tunneling is likely because the thinner oxide layer increases the probability of electrons tunneling through the barrier. Therefore, current leakage increases, rather than trapping efficiency increasing or relating to thermal effects, because oxide integrity weakens.

• Which outcome occurs when a semiconductor's doping concentration increases significantly?
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• Which outcome arises when the average binding energy per nucleon peaks within an unstable heavy nucleus undergoing induced fission?