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Which risk increases when a photodiode's reverse bias exceeds the recommended limit?

A)Increased electron-hole recombination rate
B)Zener breakdown causing reverse current
C)Reduced width of the depletion region
D)Increased thermal generated carrier density

💡 Explanation

Zener breakdown causes a large reverse current because high electric field in the depletion region facilitates electron tunneling between the valence band and conduction band, therefore increased reverse current rather than recombination because recombination minimizes excess carriers.

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