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Which risk increases when a photovoltaic cell experiences significant lattice strain?

A)Increased electron-hole recombination rate
B)Enhanced quantum tunneling probability
C)Reduced photon absorption cross-section
D)Improved open-circuit voltage output

💡 Explanation

Increased lattice strain introduces structural defects that act as trapping centers promoting electron-hole recombination because these defects disrupt the periodic potential therefore energy is dissipated rather than contributing to current, rather than enhance carrier mobility.

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