Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich risk increases when a polysilicon gate oxidation thermal budget limit is exceeded?
A)Threshold voltage parameter drifting wider✓
B)Increased carrier mobility degradation occurs
C)Latch-up susceptibility is greatly minimized
D)Substrate channel length decreases rapidly
💡 Explanation
Threshold voltage shifts occur because exceeding the thermal budget during oxidation broadens the energy distribution and tail states near the Si/SiO2 interface via interface trap generation. It reduces the effective channel and therefore, increases threshold voltage drift rather than other electrical characteristics.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which limitation restricts quantum computing decoherence when qubits entangle?
- Which outcome occurs when molten zinc sulfide cools unevenly?
- Which mechanism causes speckle patterns when laser light reflects off rough surfaces?
- Which outcome occurs when an improperly shielded high-frequency capacitor?
- Which consequence results when birefringent material experiences stress?
- Which risk increases when a turbine blade alloy cools, forming uneven precipitate concentrations along grain boundaries in the nickel-based superalloy lattice?