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Which risk increases when a polysilicon's grain boundaries are saturated with oxygen?

A)Increased material refractive index
B)Reduced mechanical tensile strength
C)Enhanced dopant carrier mobility
D)Improved thermal conductivity overall

💡 Explanation

Grain boundary elemental saturation causes embrittlement in polysilicon through segregation. The **segragation induced embrittlement** increases crack propagation because the oxygen disrupts silicon-silicon bonds, therefore lowering the tensile strength rather than improving the material's other properties.

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