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Which risk increases when a power MOSFET operating near its rated voltage experiences a sudden inductive load disconnection?

A)Increased gate oxide breakdown
B)Enhanced channel hot carrier injection
C)Elevated drain-source avalanche breakdown
D)Decreased on-state resistance

💡 Explanation

Elevated drain-source avalanche breakdown occurs because the voltage rises sharply, exceeding the MOSFET's breakdown voltage; this is due to inductive kickback. Therefore, avalanche breakdown is the primary risk, rather than the gate oxide or hot carrier effects at normal voltages/currents.

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