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Which risk increases when a pulsed laser strikes a microchip's decoupling capacitor near its breakdown voltage?

A)Dielectric material catastrophic failure
B)Increased inductive parasitic oscillation
C)Reduced operational amplifier slew rate
D)Gate oxide leakage current reduction

💡 Explanation

Dielectric breakdown is more likely because the rapid energy deposition from the laser causes a spike in capacitor voltage, potentially exceeding the breakdown voltage limit; therefore dielectric material fails rather than other consequences like induced oscillation at lower energies.

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