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← ScienceWhich risk increases when a semiconductor’s doping concentration increases beyond a threshold?
A)Decreased gate oxide breakdown voltage
B)Increased thermally activated electron mobility
C)Quantum tunneling between close orbitals✓
D)Suppression of electron-phonon interactions
💡 Explanation
As doping concentration rises, the distance between dopant atoms shrinks, and the potential barrier width decreases; quantum tunneling between close orbitals increases the likelihood that electrons will tunnel through. This results in reduced confinement rather than increased. Therefore, C rather than A, B, or D.
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