Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich risk increases when ambient temperature affects MOSFET threshold voltage?
A)Thermal runaway and device failure✓
B)Reduced gate oxide breakdown strength
C)Increased source/drain junction capacitance
D)Elimination of channel length modulation
💡 Explanation
Thermal runaway is more likely because increased temperature lowers the MOSFET threshold voltage, leading to higher current leakage. The increased leakage causes more heat generation; therefore, the transistor can fail via overheating, rather than the other failure mechanisms.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which risk increases when reinforced concrete column experiences sustained compressive load exceeding critical buckling load?
- Which risk increases when improperly compacting soil around a buried, reinforced concrete column?
- Which outcome occurs when a forging press experiences hydraulic fluid contamination?
- Which symptom indicates fuel injector pulse width increasing beyond design limits in a diesel engine?
- Which limitation results from exceeding rated air turbine speed?
- Which outcome occurs when a PLC controlling a chemical plant's reactor cooling system experiences latch-up?
