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Which risk increases when an LED’s doping concentration lessens?

A)Increased resistance across depletion region
B)Enhanced radiative recombination efficiency
C)Decreased forward voltage threshold
D)Narrowing forbidden energy band gap

💡 Explanation

Increased resistance results because reduced doping broadens the depletion region, a form of diminishing carrier concentration, impacting the band bending across the junction. Therefore, resistance increases, rather than radiative process enhancements under normal operating temperature.

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