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Which risk increases when applying excessive voltage across a microscopic gap containing a semiconductor quantum dot?

A)Dielectric breakdown occurs in insulator
B)Phonon scattering reduces quantum efficiency
C)Joule heating shifts spectral lines
D)Electron degeneracy overwhelms band structure

💡 Explanation

Dielectric breakdown is more likely because sufficiently strong electric exceeding dielectric strength of the material, initiates rapid ionization and current flow. Therefore, breakdown becomes likely, rather than just heating (Joule) or changed levels because voltage is the driver.

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