Which risk increases when applying excessive voltage across a MOSFET gate?

💡 Explanation

Excessive voltage can cause gate-oxide dielectric breakdown because it enhances electron tunneling through the gate oxide, leading to a short circuit. Therefore, breakdown is the outcome, rather than enhanced mobility; different voltages influence mobility.

• Which mechanism causes increased hysteresis losses when a ferromagnetic core transformer operates at higher frequencies?
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• Which outcome occurs when applying mechanical stress to a molecular solid?
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