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Which risk increases when applying excessive voltage to a silicon-based tunnel diode?

A)Zener breakdown causes reverse conduction
B)Miller effect causes parasitic oscillation
C)Impact ionization causes avalanche breakdown
D)Ohmic heating causes thermal runaway

💡 Explanation

Excessive voltage causes increased current and therefore Ohmic heating; this leads to thermal runaway because increased temperature causes further increases in current. This melts and destroys the diode, rather than avalanche breakdown occurring which happens at lower voltage.

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