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Which risk increases when dopants concentrate at gate oxide interfaces?

A)Increased electron quantum tunneling rate
B)Reduced transistor channel saturation velocity
C)Elevated electron-phonon scattering probability
D)Decreased depletion capacitances influence

💡 Explanation

Enhanced doping causes a narrowed potential barrier; therefore, the increased probability of electron quantum tunneling allows channel electrons to leak across the gate oxide, rather than the expected channel control under normal conditions, because increased phonon scattering would lead solely to reduced efficiency.

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