Which risk increases when electrons tunnel through MOSFET gate oxide?

💡 Explanation

Increased threshold voltage instability occurs because charge trapping via Fowler-Nordheim tunneling accumulates hot electrons and injects them into gate oxide defects; therefore causing threshold shift, rather than other effects related to carriers in the channel.

• Which outcome results when iron(III) chloride mixes with sodium hydroxide?
• Which outcome results when exceeding the maximum allowable reverse voltage in a silicon PN junction diode?
• Which consequence results when localized mass-energy density increases?
• Which consequence results when extreme mass collapses spacetime in pulsars?
• Which consequence unfolds when gravitational tidal shear exceeds material strength?
• Which risk increases when a fiber optic cable experiences microbending?