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Which risk increases when exceeding reverse voltage limits in bipolar junction transistors?

A)Thermal runaway occurrence
B)Base current reduction
C)Increased transistor gain
D)Faster switching speeds

💡 Explanation

Thermal runaway is likely because exceeding reverse voltage induces avalanche breakdown at the collector-base junction, increasing current and heat. This positive feedback causes thermal runaway rather than controlled operation; it does not directly affect the base current or cause faster switching.

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