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Which risk increases when gallium arsenide photodiodes experience high reverse bias?

A)Avalanche breakdown causes increased photocurrent
B)Zener breakdown causes energy band overlap
C)Thermal runaway inhibits quantum tunnelling
D)Kirk effect limits electron velocities

💡 Explanation

Avalanche breakdown is triggered by high reverse bias. Because the electric field accelerates electrons facilitating impact ionization thereby causing further electron generation. Therefore, increased photocurrent results, rather than quantum tunnelling, under extreme reverse voltage.

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