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← ScienceWhich risk increases when high intensity electromagnetic radiation strikes silicon, exceeding Shockley–Queisser efficiency limit?
A)Increased electron-hole recombination rate✓
B)Augmented phonon bottleneck formation
C)Reduced free exciton density
D)Elevated Auger electron emission
💡 Explanation
Increased radiation causes the photoexcited electron-hole pairs to recombine via radiative recombination which releases heat; therefore, the cell's efficiency drops below limits because this energy dissipates rather than contributing to electricity.
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