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Which risk increases when parasitic capacitance is not mitigated in high-frequency MOSFET circuits?

A)Decreased switching speed saturation
B)Gate oxide rupture probability
C)Increased power dissipation losses
D)Increased thermal runaway probability

💡 Explanation

Increased power dissipation losses occur because parasitic capacitance causes the MOSFETs to consume additional power during switching operations through increased current flow during the Miller effect. Therefore, energy loss is higher, rather than gate rupture, because the gate is now being overdriven.

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