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Which risk increases when rapid crystal growth exceeds diffusion limits?

A)Increased thermodynamic equilibrium achievement
B)Lowered microsegregation coefficient
C)Enhanced dislocation density
D)Improved surface planarization uniformity

💡 Explanation

Increased dislocation density results, because constitutional supercooling causes localized solute build-up ahead of the solidification front. This results from limited solute diffusion at the interface; therefore a defective crystal grows, rather than achieving a smooth layer.

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