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Which risk increases when rapid recrystallization follows laser annealing of polysilicon?

A)Increased grain boundary carrier scattering efficiency
B)Elevated dislocation density within crystal lattice
C)Accelerated dopant segregation toward surface
D)Diminished interstitial defect recombination lifetime

💡 Explanation

Elevated dislocation density increases because rapid recrystallization during laser annealing induces thermal stress exceeding the polysilicon's yield strength; therefore, dislocation density increases due to plastic deformation rather than perfect lattice reconstruction due to speed.

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