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← ScienceWhich risk increases when rapid recrystallization follows laser annealing of polysilicon?
A)Increased grain boundary carrier scattering efficiency
B)Elevated dislocation density within crystal lattice✓
C)Accelerated dopant segregation toward surface
D)Diminished interstitial defect recombination lifetime
💡 Explanation
Elevated dislocation density increases because rapid recrystallization during laser annealing induces thermal stress exceeding the polysilicon's yield strength; therefore, dislocation density increases due to plastic deformation rather than perfect lattice reconstruction due to speed.
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