VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which risk increases when rapid thermal cycling stresses a silicon carbide (SiC) crystal lattice?

A)Increased dielectric breakdown strength
B)Enhanced electron mobility
C)Increased thermal conductivity
D)Microcrack propagation initiation

💡 Explanation

Rapid thermal cycling induces mechanical stress because differing expansion coefficients create strain, therefore the risk of microcrack propagation initiation arises due to exceeding the lattice's yield strength, rather than the electrical or thermal property changes.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science