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← ScienceWhich risk increases when rapid thermal cycling stresses a silicon carbide (SiC) crystal lattice?
A)Increased dielectric breakdown strength
B)Enhanced electron mobility
C)Increased thermal conductivity
D)Microcrack propagation initiation✓
💡 Explanation
Rapid thermal cycling induces mechanical stress because differing expansion coefficients create strain, therefore the risk of microcrack propagation initiation arises due to exceeding the lattice's yield strength, rather than the electrical or thermal property changes.
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